NAND04GA3C2A View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
NAND04GA3C2A Datasheet PDF : 51 Pages
| |||
12 DC and AC parameters
NAND04GA3C2A, NAND04GW3C2A
Table 20. AC Characteristics for Operations, VDDQ 3V Devices(1)
Symbol
Alt.
Symbol
Parameter
tALLRL1
tALLRL2
tBHRL
tBLBH1
tBLBH2
tBLBH3
tBLBH4
tAR
tRR
tPROG
tBERS
tWHBH1
tRST
Address Latch Low to
Read Enable Low
Read Electronic Signature
Read cycle
Ready/Busy High to Read Enable Low
Read Busy time
Ready/Busy Low to
Ready/Busy High
Program Busy time
Erase Busy time
Reset Busy time, during ready
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
tCLLRL
tDZRL
tEHQZ
tELQV
tRHRL
tCLR
tIR
tCHZ
tCEA
tREH
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Read Enable High Hold time
tRHQZ
tRLRH
tRHZ
tRP
Read Enable High to Output Hi-Z
Read Enable Low to
Read Enable High
Read Enable Pulse Width
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read Cycle time
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable Access time
Read ES Access time(2)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
tWHBL
tWB
Write Enable High to Ready/Busy Low
tWHRL
tVHWH(3)
tVLWH(3)
tWHR
tWW
Write Enable High to Read Enable Low
Write Protection time
1. AC Characteristics for VDDQ 1.8V devices are still to be determined.
2. ES = Electronic Signature.
3. WP High to W High during Program/Erase Enable operations.
3V I/O Unit
Min
20
ns
Min
20
ns
Min
20
ns
Max
60
µs
Max 2000 µs
Max
3
ms
Max
5
µs
Max
20
µs
Max
40
µs
Max 200
µs
Min
15
ns
Min
0
ns
Max
30
ns
Max
50
ns
Min
20
ns
Max
30
ns
Min
40
ns
Min
60
ns
Max
45
ns
Max
60
µs
Max 100
ns
Min
80
ns
Min
100
ns
Min
100
ns
38/51
|
|
Share Link: 