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IRF1405LPBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1405LPBF HEXFET® Power MOSFET IR
International Rectifier IR
IRF1405LPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRF1405S/LPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 101A
16
VDS = 44V
VDS = 27V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
60
120
180
240
300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175° C
100
TJ = 25° C
10
VGS = 0 V
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
10us
100
100us
1ms
10
10ms
TC = 25°C
TJ = 175° C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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