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Q2004V4 View Datasheet(PDF) - Unspecified

Part Name
Description
View to exact match
Q2004V4
ETC
Unspecified ETC
Q2004V4 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Triacs
Data Sheets
IT(RMS)
(4) (16)
MT1
Isolated
MT2
Part Number
Non-isolated
MT2
MT2
MT2
VDRM
(1)
G
IGT
(3) (7) (15)
IDRM
(1) (16)
MAX
Gate
TO-3
Fastpak
10 A
15 A
25 A
35 A
Q6025P5
Q8025P5
Q6035P5
Q8035P5
MT1
G
MT2
TO-220
MT1
G
MT2
TO-202
MT1
G
MT2
TO-220
MT2
MT1
TO-263
D2Pak
See “Package Dimensions” section for variations. (11)
Q2010L4
Q2010R4
Q2010N4
Q4010L4
Q4010R4
Q4010N4
Q6010L4
Q6010R4
Q6010N4
Q8010L4
Q8010R4
Q8010N4
QK010L4
QK010R4
QK010N4
Q2010L5
Q2010F51
Q2010R5
Q2010N5
Q4010L5
Q4010F51
Q4010R5
Q4010N5
Q6010L5
Q6010F51
Q6010R5
Q6010N5
Q8010L5
Q8010R5
Q8010N5
QK010L5
QK010R5
QK010N5
Q2015L5
Q2015R5
Q2015N5
Q4015L5
Q4015R5
Q4015N5
Q6015L5
Q6015R5
Q6015N5
Q8015L5
Q8015R5
Q8015N5
QK015L5
QK015R5
QK015N5
Q2025R5
Q2025N5
Q4025R5
Q4025N5
Q6025R5
Q6025N5
Q8025R5
Q8025N5
QK025R5
QK025N5
Volts
MIN
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
600
800
600
800
mAmps
mAmps
TC = TC = TC =
QI QII QIII QIV QIV 25 °C 100 °C 125 °C
MAX
TYP
MAX
25 25 25 50
0.05
1
25 25 25 50
0.05
1
25 25 25 50
0.05
1
25 25 25 50
0.1
1
25 25 25 50
0.1
3
50 50 50
75 0.05 0.5
2
50 50 50
75 0.05 0.5
2
50 50 50
75 0.05 0.5
2
50 50 50
75 0.1 0.5
2
50 50 50
75 0.1
3
50 50 50
0.05 0.5
2
50 50 50
0.05 0.5
2
50 50 50
0.05 0.5
2
50 50 50
0.1
1
3
50 50 50
0.1
3
50 50 50
0.1
1
3
50 50 50
0.1
1
3
50 50 50
0.1
1
3
50 50 50
0.1
1
3
50 50 50
0.1
3
50 50 50
120 0.1
5
50 50 50
120 0.1
5
50 50 50
120 0.1
5
50 50 50
120 0.1
5
Specific Test Conditions
di/dt — Maximum rate-of-change of on-state current; IGT = 200 mA with
0.1 µs rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM — Peak off-state current, gate open; VDRM = maximum rated value
IGT — DC gate trigger current in specific operating quadrants;
VD = 12 V dc
IGTM — Peak gate trigger current
IH — Holding current (DC); gate open
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT IGTM
tgt — Gate controlled turn-on time; IGT = 200 mA with 0.1 µs rise time
VDRM — Repetitive peak blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc; RL = 60
VTM — Peak on-state voltage at maximum rated RMS current
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless specified otherwise.
• Operating temperature range (TJ) is -65 °C to +125 °C for TO-92,
-25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other
devices.
• Storage temperature range (TS) is -65 °C to +150 °C for TO-92,
-40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other
devices.
• Lead solder temperature is a maximum of 230 °C for 10 seconds,
maximum; 1/16" (1.59 mm) from case.
• The case temperature (TC) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
http://www.littelfuse.com
+1 972-580-7777
E2 - 4
©2004 Littelfuse, Inc.
Thyristor Product Catalog
 

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