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PZTA92,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
PZTA92,115
NXP
NXP Semiconductors. NXP
PZTA92,115 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
PNP high-voltage transistor
Product specification
PZTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
K/W
23
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 200 V
IC = 0; VBE = 5 V
IC = 1 mA; VCE = 10 V; note 1
IC = 10 mA; VCE = 10 V; note 1
IC = 30 mA; VCE = 10 V; note 1
IC = 20 mA; IB = 2 mA
MIN.
25
40
25
IC = 20 mA; IB = 2 mA
IE = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz 50
MAX.
20
100
500
UNIT
nA
nA
mV
900
6
mV
pF
MHz
1999 Apr 14
3
 

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