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IRFP450NPBF View Datasheet(PDF) - Vishay Siliconix

Part NameDescriptionManufacturer
IRFP450NPBF Power MOSFET VISAY
Vishay Siliconix VISAY
IRFP450NPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP450N, SiHFP450N
Vishay Siliconix
D.U.T
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-
+
RG
dV/dt controlled by RG
+
Driver same type as D.U.T.
ISD controlled by duty factor "D"
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91232.
Document Number: 91232
S-Pending-Rev. b, 26-Jun-08
www.vishay.com
7
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