FCP11N60N View Datasheet(PDF) - Fairchild Semiconductor
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FCP11N60N Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
5.0 V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.7
0.6
0.5
VGS = 10V
0.4
VGS = 20V
0.3
0.2
0
*Notes: TC = 25oC
8
16
24
32
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Coss
*Notes:
1. VGS = 0V
2. f = 1MHz
2000
Ciss
Crss
0
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
60
10
150oC
25oC
-55oC
1
0.1
2
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
*Notes: ID = 5.4A
0
0
5
10 15 20 25 30
Qg, Total Gate Charge [nC]
FCP11N60N / FCPF11N60NT Rev. A
3
www.fairchildsemi.com
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