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K2070 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталогеКомпоненты Описаниепроизводитель
K2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K2070 Datasheet PDF : 6 Pages
1 2 3 4 5 6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
VGS = 10 V
0.6
0.5
0.4
TA = 75 ˚C
0.3
25 ˚C
0.2
–25 ˚C
0.1
0
0.01 0.03 0.1 0.3
1
ID - Drain Current - A
3 10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
tf
td(off)
50
20
tf
10
td(on)
5
2
1
0.1 0.2
0.5 1
2
ID - Drain Current - A
5 10
4
2SK2070
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.5
0.4
0.3
ID = 2 A
0.2
1A
0.1
0
1000
500
5
10
15
20
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
200
100
Coss
50
20
VGS = 0
10 f = 1 MHz
12
5
10 20
Crss
50 100
VDS - Drain to Source Voltage - V
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