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K2070 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталогеКомпоненты Описаниепроизводитель
K2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K2070 Datasheet PDF : 6 Pages
1 2 3 4 5 6
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2070
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2070 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
RDS(on) = 0.45 MAX. @VGS = 4 V, ID = 1.0 A
RDS(on) = 0.35 MAX. @VGS = 10 V, ID = 1.0 A
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
0.8 ±0.1
0.6 ±0.1
0.6 ±0.1
0.6 ±0.1
1.7 1.7
0.55 ±0.1
GDS
EQUIVALENT CIRCUIT
Drain (D)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Gate (G)
Internal
diode
Gate
protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW 10 ms,
Duty cycle 50 %
RATING
100
±20
±1.5
±3.0
UNIT
V
V
A
A
1.0
W
150
˚C
–55 to +150
˚C
Document No. D11227EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
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