BAV70W View Datasheet(PDF) - NXP Semiconductors.
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BAV70W Datasheet PDF : 15 Pages
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NXP Semiconductors
BAV70 series
High-speed switching diodes
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
IF = 10 mA
-
-
IF = 50 mA
-
-
IF = 150 mA
-
-
IR
reverse current
VR = 25 V
-
-
VR = 80 V
-
-
VR = 25 V; Tj = 150 °C -
-
VR = 80 V; Tj = 150 °C -
-
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery time
[2] -
-
VFR
forward recovery voltage
[3] -
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 µA
30 µA
100 µA
1.5 pF
4
ns
1.75 V
BAV70_SER_7
Product data sheet
Rev. 07 — 27 November 2007
© NXP B.V. 2007. All rights reserved.
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