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IRFW/I540A View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW/I540A Advanced Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW/I540A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.08
0.06
VGS = 10 V
0.04
0.02
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
30
60
90
120
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2500
2000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1500
C oss
1000
C rss
500
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFW/I540A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
100
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
10
VDS = 20 V
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0
10
20
30
40
50
60
70
QG , Total Gate Charge [nC]
3
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