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IRFW/I540A View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW/I540A Advanced Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW/I540A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advanced Power MOSFET
IRFW/I540A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.041 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25) *
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052 Ω
ID = 28 A
D2-PAK I2-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.4
40
62.5
Units
/W
Rev. B1
2001 Fairchild Semiconductor Corporation
1
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