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IRFP2907ZPBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP2907ZPBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP2907ZPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
AUTOMOTIVE MOSFET
PD - 95480
IRFP2907ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 4.5m‰
S
ID = 90A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
™ Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
™ Avalanche Current
h Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
j Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
j Junction-to-Ambient
Max.
170
120
90
680
310
2.0
± 20
520
690
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
7/16/04
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