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IRFP4768PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4768PBF HEXFET®Power MOSFET IR
International Rectifier IR
IRFP4768PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP4768PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 9. Maximum Drain Current vs.
Case Temperature
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-50 0 50 100 150 200 250 300
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
320
Id = 5mA
300
280
260
240
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
3200
2800
2400
2000
ID
TOP
12A
17A
BOTTOM 56A
1600
1200
800
400
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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