IRFP4768PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRFP4768PBF Datasheet PDF : 8 Pages
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PD - 97379
IRFP4768PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
250V
RDS(on) typ.
14.5mΩ
G
max. 17.5mΩ
S ID
93A
G
G ate
D
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy d
IAR
Avalanche Current c
EAR
Repetitive Avalanche Energy c
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case ij
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
www.irf.com
Max.
93
66
370
520
3.4
± 20
24
-55 to + 175
300
10lbfxin (1.1Nxm)
770
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
02/26/09
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