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IRF1104PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1104PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRF1104PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF1104PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.009 VGS = 10V, ID = 60A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
37 ––– ––– S VDS = 25V, ID = 60A
––– ––– 25
––– ––– 250
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 93
ID = 60A
––– ––– 29 nC VDS = 32V
––– ––– 30
VGS = 10V, See Fig. 6 and 13 „
––– 15 –––
VDD = 20V
––– 114 –––
––– 28 –––
ns
ID = 60A
RG = 3.6
––– 19 –––
RD = 0.33, See Fig. 10 „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 2900 –––
VGS = 0V
––– 1100 ––– pF VDS = 25V
––– 250 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 100…
A
showing the
integral reverse
G
––– ––– 400
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 60A, VGS = 0V „
––– 74 110 ns TJ = 25°C, IF = 60A
––– 188 280 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 194µH
RG = 25, IAS = 60A. (See Figure 12)
ƒ ISD 60A, di/dt 304A/µs, VDD V(BR)DSS,
TJ 175°C
2
„ Pulse width 300µs; duty cycle 2%.
… Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
www.irf.com
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