2N6122 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2N6122 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6121 2N6122 2N6123
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6121
2N6122 IC=0.1A ;IB=0
2N6123
VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A
VCEsat-2 Collector-emitter saturation voltage IC=4.0A;IB=1.0A
VBE
Base-emitter on voltage
IC=1.5A ; VCE=2V
2N6121
VCE=45V;VBE=1.5V
TC=125℃
ICEX
Collector cut-off current
2N6122
VCE=60V;VBE=1.5V
TC=125℃
2N6123
VCE=80V;VBE=1.5V
TC=125℃
2N6121 VCE=45V;IB=0
ICEO
Collector cut-off current 2N6122 VCE=60V;IB=0
2N6123 VCE=80V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
2N6121
hFE-1
DC current gain
2N6122 IC=1.5A ; VCE=2V
2N6123
2N6121
hFE-2
DC current gain
2N6122 IC=4A ; VCE=2V
2N6123
fT
Transition frequency
IC=1A ; VCE=4V
MIN TYP. MAX UNIT
45
60
V
80
0.6
V
1.4
V
1.2
V
0.1
2.0
0.1
2.0
mA
0.1
2.0
1.0 mA
1.0 mA
25
100
20
80
10
7
2.5
MHz
2
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