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2N3772G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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2N3772G Datasheet PDF : 5 Pages
1 2 3 4 5
2N3771, 2N3772
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05
0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.02
0.05 0.1 0.2
qJC(t) = r(t) qJC
P(pk)
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0
10
20
t, TIME (ms)
50 100 200
Figure 2. Thermal Response — 2N3771, 2N3772
500 1000 2000
40
30
2N3771
20
2N3772, (dc)
dc
40 ms
100 ms
10
TC = 25°C
7.0
BONDING WIRE LIMITED
THERMALLY LIMITED
5.0
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
3.0 PULSE CURVES APPLY
2N3771
FOR ALL DEVICES
2.0
2N3772
1.0
2.0 3.0 5.0 7.0 10
20 30
200 ms
1.0 ms
100 ms
500 ms
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. Active−Region Safe Operating Area
— 2N3771, 2N3772
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by TJ(max).
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