MJ11019 View Datasheet(PDF) - Inchange Semiconductor
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Description
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MJ11019 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11019
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0
-200
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -15A ,IB= -0.15A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -10A ; VCE= -5V
VCEV=200V;VBE(off)=1.5V
VCEV=200V;VBE(off)=1.5V;TC=150℃
VCE= -100V, IB=B 0
-2.0
V
-3.4
V
-3.8
V
-2.8
V
-0.5
-5.0
mA
-1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-2
mA
hFE-1
DC Current Gain
IC= -10A ; VCE= -5V
400
15000
hFE-2
DC Current Gain
IC= -15A ; VCE= -5V
100
COB
Output Capacitance
Switching times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IE= 0 ; VCB= -10V,f= 0.1MHz
IC= -10A , VCC= -100V;
IB1= -0.1A; VBE(off)= -5V;
Duty Cycle≤1.0%
600 pF
75
ns
0.5
μs
2.7
μs
2.5
μs
isc Website：www.iscsemi.cn
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