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MMBD1703 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
MMBD1703
Fairchild
Fairchild Semiconductor Fairchild
MMBD1703 Datasheet PDF : 3 Pages
1 2 3
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
VF
CO
TRR
Parameter
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
Test Conditions
IR = 5.0 µA
VR = 20 V
IF = 10 µA
IF = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
VR = 0, f = 1.0 MHz
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
Min
30
420
520
640
760
810
0.89
Max
50
500
610
740
880
950
1.1
1.0
Units
V
nA
mV
mV
mV
mV
mV
V
pF
700
pS
1.0
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
60
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
10
Ta= 25°C
50
40
1
23 5
10
20 30 50 100
IR - REVERSE CURRENT (uA)
5
0
1
2
3
5
10
20
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
600 Ta= 25°C
550
500
450
400
350
300
1
23 5
10 20 30 50 100
IF - FORWARD CURRENT (uA)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
850 Ta= 25°C
800
750
700
650
600
550
0.1 0.2 0.3 0.5 1
2 3 5 10
I F - FORWARD CURRENT (mA)
 

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