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MMBD1705A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
MMBD1705A
Fairchild
Fairchild Semiconductor Fairchild
MMBD1705A Datasheet PDF : 3 Pages
1 2 3
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
SOT-23
3
85
1
2
2
MARKING
MMBD1701 85
MMBD1701A 85A
1
MMBD1703 87
MMBD1703A 87A
MMBD1704 88
MMBD1704A 88A
MMBD1705 89
MMBD1705A 89A
CONNECTION DIAGRAMS
1701 3
3 1703
1
1704
2 NC
3
1
2
3 1705
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
20
50
150
150
250
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
mA
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
MMBD1701/A /1703/A-1705/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
©1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B
 

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