PS8701-E3 View Datasheet(PDF) - NEC => Renesas Technology
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Description
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PS8701-E3
NEC => Renesas Technology
PS8701-E3 Datasheet PDF : 8 Pages
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PS8701
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
40
100
80
30
60
20
40
10
20
0
25
50
75
100
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
TA = +100 ˚C
10
+50 ˚C
+25 ˚C
1
0 ˚C
–25 ˚C
0.1
0
25
50
75
100
Ambient Temperature TA (˚C)
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
1 000
IF = 0 mA
100
VCC = VO = 30 V
VCC = VO = 5.5 V
10
1
0.01
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage VF (V)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
80
VCC = 4.5 V,
70
VO = 0.4 V
60
50
40
30
20
10
0
0.5 1
5 10
50
Forward Current IF (mA)
0.1
–25
0
25
50
75
100
Ambient Temperature TA (˚C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.6
Normalized to 1.0
1.4
at TA = 25 ˚C, IF = 16 mA,
VCC = 4.5 V, VO = 0.4 V
1001....0862,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
0.4
0.2
0.0
–50 –25 0
25 50 75 100
Ambient Temperature TA (˚C)
4
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