IRFIB6N60A View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRFIB6N60A

HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

International Rectifier 

IRFIB6N60A

Static @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

RDS(on)

VGS(th)

IDSS

IGSS

Parameter

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Min. Typ. Max. Units

Conditions

600 ––– ––– V VGS = 0V, ID = 250µA

––– ––– 0.75 W VGS = 10V, ID = 3.3A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 25

––– ––– 250

µA VDS = 600V, VGS = 0V

VDS = 480V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 30V

––– ––– -100

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

Min. Typ. Max. Units

Conditions

5.5 ––– ––– S VDS = 25V, ID = 5.5A

––– ––– 49

––– ––– 13

––– ––– 20

––– 13 –––

ID = 9.2A

nC VDS = 400V

VGS = 10V, See Fig. 6 and 13 „

VDD = 300V

––– 25 ––– ns ID = 9.2A

––– 30 –––

RG = 9.1W

––– 22 –––

RD = 35.5W,See Fig. 10 „

––– 1400 –––

VGS = 0V

––– 180 –––

VDS = 25V

––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 1957 –––

––– 49 –––

––– 96 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 480V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 480V …

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Thermal Resistance

Typ.

–––

–––

–––

Max.

290

9.2

6.0

Units

mJ

A

mJ

RqJC

RqJA

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

–––

Max.

2.1

65

Units

°C/W

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 5.5

A showing the

integral reverse

G

––– ––– 37

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „

––– 530 800 ns TJ = 25°C, IF = 9.2A

––– 3.0 4.4 µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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