datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRFP27N60K View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP27N60K SMPS MOSFET IR
International Rectifier IR
IRFP27N60K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PD - 94407
SMPS MOSFET IRFP27N60K
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
600V
180m
27A
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
27
18
110
500
4.0
± 30
13
-55 to + 150
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
530
27
50
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
1
03/20/02
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]