IRF1405(2001) View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRF1405 Datasheet PDF : 9 Pages
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IRF1405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– 4.6 5.3 mΩ VGS = 10V, ID = 101A
2.0 ––– 4.0
69 ––– –––
V VDS = 10V, ID = 250µA
S VDS = 25V, ID = 110A
––– ––– 20
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 170 260
––– 44 66
––– 62 93
––– 13 –––
ID = 101A
nC VDS = 44V
VGS = 10V
VDD = 38V
––– 190 ––– ns ID = 110A
––– 130 –––
RG = 1.1Ω
––– 110 –––
VGS = 10V
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 5480 –––
VGS = 0V
––– 1210 ––– pF VDS = 25V
––– 280 –––
ƒ = 1.0MHz, See Fig. 5
––– 5210 –––
––– 900 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
––– 1500 –––
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 101A. (See Figure 12).
ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 169
A
showing the
integral reverse
G
––– ––– 680
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V
––– 88 130 ns TJ = 25°C, IF = 101A
––– 250 380 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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