IRFIB7N50A View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRFIB7N50A

HEXFET® Power MOSFET

International Rectifier 

IRFIB7N50A

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

500 ––– ––– V VGS = 0V, ID = 250µA

––– 0.61 ––– V/°C Reference to 25°C, ID = 1mA†

––– ––– 0.52 Ω VGS = 10V, ID = 4.0A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 25

––– ––– 250

µA VDS = 500V, VGS = 0V

VDS = 400V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 30V

––– ––– -100

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance†

Coss

Output Capacitance†

Coss eff. Effective Output Capacitance

Avalanche Characteristics

Min. Typ. Max. Units

Conditions

6.1 ––– ––– S VDS = 50V, ID = 6.6A†

––– ––– 52

ID = 11A

––– ––– 13 nC VDS = 400V

––– ––– 18

VGS = 10V, See Fig. 6 and 13 „†

––– 14 –––

VDD = 250V

––– 35 ––– ns ID = 11A

––– 32 –––

RG = 9.1Ω

––– 28 –––

RD = 22Ω,See Fig. 10 „†

––– 1423 –––

VGS = 0V

––– 208 –––

VDS = 25V

––– 8.1 ––– pF ƒ = 1.0MHz, See Fig. 5†

––– 2000 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

––– 55 –––

VGS = 0V, VDS = 400V, ƒ = 1.0MHz

––– 97 –––

VGS = 0V, VDS = 0V to 400V …†

Parameter

EAS

Single Pulse Avalanche Energy‚†

IAR

Avalanche Current†

EAR

Repetitive Avalanche Energy

Thermal Resistance

Typ.

–––

–––

–––

Max.

275

11

6.0

Units

mJ

A

mJ

Parameter

RθJC

RθJA

Junction-to-Case

Junction-to-Ambient

Diode Characteristics

Typ.

–––

–––

Max.

2.1

65

Units

°C/W

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) †

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 6.6

A showing the

integral reverse

G

––– ––– 44

p-n junction diode.

S

––– ––– 1.5

––– 510 770

––– 3.4 5.1

V TJ = 25°C, IS = 11A, VGS = 0V „

ns TJ = 25°C, IF = 11A

µC di/dt = 100A/µs „†

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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