IRFP23N50L View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRFP23N50L

SMPS MOSFET

International Rectifier 

PD - 94230B

SMPS MOSFET IRFP23N50L

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

HEXFET® Power MOSFET

VDSS RDS(on) typ. Trr typ. ID

500V 0.190Ω 170ns 23A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise

immunity.

TO-247AC

Absolute Maximum Ratings

Parameter

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM

™ Pulsed Drain Current

PD @TC = 25°C Power Dissipation

Max.

23

15

92

370

Units

A

W

VGS

dv/dt

TJ

TSTG

Linear Derating Factor

Gate-to-Source Voltage

e Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

2.9

± 30

14

-55 to + 150

W/°C

V

V/ns

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Diode Characteristics

300 (1.6mm from case )

x x 10lb in (1.1N m)

Symbol

IS

Parameter

Continuous Source Current

Min. Typ. Max. Units Conditions

––– ––– 23

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

––– ––– 92

––– ––– 1.5

integral reverse

p-n junction diode.

f V TJ = 25°C, IS = 14A, VGS = 0V

trr

Reverse Recovery Time

f ––– 170 250 ns TJ = 25°C, IF = 23A

––– 220 330

TJ = 125°C, di/dt = 100A/µs

Qrr

Reverse Recovery Charge

f ––– 560 840 nC TJ = 25°C, IS = 23A, VGS = 0V

––– 980 1500

f TJ = 125°C, di/dt = 100A/µs

IRRM

Reverse Recovery Current

––– 7.6 11 A TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

1

07/18/03

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