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IRFP32N50K View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP32N50K HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A IR
International Rectifier IR
IRFP32N50K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PD - 94099B
SMPS MOSFET IRFP32N50K
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
www.irf.com
HEXFET® Power MOSFET
VDSS
RDS(on)typ.
ID
500V
0.135
32A
TO-247AC
Max.
32
20
130
460
3.7
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
10lb*in (1.1N*m)
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
450
32
46
Max.
0.26
–––
40
Units
mJ
A
mJ
Units
°C/W
1
10/19/04
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