TS482IDT View Datasheet(PDF) - STMicroelectronics
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TS482IDT Datasheet PDF : 26 Pages
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TS482
2 Electrical Characteristics
Electrical Characteristics
Table 3.
Symbol
Electrical characteristics when VCC = +5V, GND = 0V, Tamb = 25°C (unless
otherwise specified)
Parameter
Min. Typ. Max. Unit
ICC
Supply Current
No input signal, no load
VIO Input Offset Voltage (VICM = VCC/2)
IIB
Input Bias Current (VICM = VCC/2)
Output Power
THD+N = 0.1% Max, F = 1kHz, RL = 32Ω
PO
THD+N = 1% Max, F = 1kHz, RL = 32Ω
60
THD+N = 0.1% Max, F = 1kHz, RL = 16Ω
THD+N = 1% Max, F = 1kHz, RL = 16Ω
95
THD + N
Total Harmonic Distortion + Noise (Av=-1) (1)
RL = 32Ω, Pout = 60mW, 20Hz ≤F ≤20kHz
RL = 16Ω, Pout = 90mW, 20Hz ≤F ≤20kHz
PSRR Power Supply Rejection Ratio (Av=1), inputs floating
F = 100Hz, Vripple = 100mVpp
Max Output Current
IO
THD +N < 1%, RL = 16Ω connected between out and VCC/2 106
Output Swing
VOL: RL = 32Ω
VO
VOH: RL = 32Ω
VOL: RL = 16Ω
VOH: RL = 16Ω
4.45
4.2
Signal-to-Noise Ratio (Filter Type A, Av=-1)
SNR
RL = 32Ω, THD +N < 0.2%, 20Hz ≤F ≤20kHz
95
Crosstalk
Channel Separation, RL = 32Ω
F = 1kHz
F = 20Hz to 20kHz
Channel Separation, RL = 16Ω
F = 1kHz
F = 20Hz to 20kHz
CI Input Capacitance
GBP Gain Bandwidth Product (RL = 32Ω)
1.35
SR Slew Rate, Unity Gain Inverting (RL = 16Ω)
0.45
1. Fig. 68 to 79 show dispersion of these parameters.
5.5
1
200
65
67.5
100
107
0.03
0.03
85
120
0.4
4.6
0.55
4.4
110
100
80
100
80
1
2.2
0.7
7.2 mA
5 mV
500 nA
mW
%
dB
mA
0.48
V
0.65
dB
dB
pF
MHz
V/µs
3/26
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