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IRFB23N15 View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFB23N15 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– ––– V VGS = 0V, ID = 250µA
0.18 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.090 VGS = 10V, ID = 14A „
––– 5.5 V VDS = VGS, ID = 250µA
––– 25
––– 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
––– 100 nA VGS = 30V
––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
11 ––– –––
––– 37 56
––– 9.6 14
––– 19 29
––– 10 –––
––– 32 –––
––– 18 –––
––– 8.4 –––
––– 1200 –––
––– 260 –––
––– 65 –––
––– 1520 –––
––– 120 –––
––– 210 –––
S VDS = 25V, ID = 14A
ID = 14A
nC VDS = 120V
VGS = 10V, „
VDD = 75V
ns ID = 14A
RG = 5.1
VGS = 10V „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz†
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
–––
260
mJ
–––
14
A
–––
13.6
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
–––
0.50
–––
–––
1.1
–––
°C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 23
A showing the
integral reverse
G
––– ––– 92
p-n junction diode.
S
VSD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
––– 150 220 ns TJ = 25°C, IF = 14A
––– 0.8 1.2 µC di/dt = 100A/µs „
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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