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IRFP140N 데이터 시트보기 (PDF) - International Rectifier

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IRFP140N HEXFET® Power MOSFET IR
International Rectifier IR
IRFP140N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP140N
2400
2000
1600
C iss
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH OR TE D
C rss = C gd
C oss = C ds + C gd
1200
C oss
800
C rss
400
0
A
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 1 75 °C
TJ = 25°C
10
VGS = 0V A
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
ID = 16A
16
V DS = 80V
V DS = 50V
V DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
100
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
S ing le P u lse
1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
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