datasheetbank_Logo    전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
부품명 :

IRFP140N 데이터 시트보기 (PDF) - International Rectifier

부품명IRFP140N IR
International Rectifier IR
상세내역HEXFET® Power MOSFET
IRFP140N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP140N
2400
2000
1600
C iss
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH OR TE D
C rss = C gd
C oss = C ds + C gd
1200
C oss
800
C rss
400
0
A
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 1 75 °C
TJ = 25°C
10
VGS = 0V A
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
ID = 16A
16
V DS = 80V
V DS = 50V
V DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
100
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
S ing le P u lse
1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
Direct download click here
 

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated

Share Link : IR
@ 2014 - 2018  [ ][ 개인정보 보호정책 ] [ 요청 데이타시트 ][ 제휴문의 ]