IRFP140N View Datasheet(PDF) - International Rectifier
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Description
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IRFP140N Datasheet PDF : 8 Pages
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IRFP140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.052 Ω VGS = 10V, ID = 16A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 16A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg
Total Gate Charge
––– ––– 94
ID = 16A
Qgs
Gate-to-Source Charge
––– ––– 15 nC VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 43
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 8.2 –––
VDD = 50V
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
39 –––
44 –––
ns
ID = 16A
RG = 5.1Ω
tf
Fall Time
––– 33 –––
RD = 3.0Ω, See Fig. 10
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 5.0 –––
Between lead,
6mm (0.25in.)
nH
–––––– 13 ––––––
from package
and center of die contact
D
G
S
Ciss
Input Capacitance
––– 1400 –––
VGS = 0V
Coss
Output Capacitance
––– 330 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 33
––– ––– 110
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V
––– 170 250 ns TJ = 25°C, IF = 16A
––– 1.1 1.6 µC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF540N data and test conditions.
2
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