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IRF820AS View Datasheet(PDF) - International Rectifier

Part NameIRF820AS IR
International Rectifier IR
DescriptionSMPS MOSFET
IRF820AS Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF820AS/L
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20µs PULSE WIDTH
TJ = 150 °C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
TJ = 150 ° C
1
TJ = 25° C
0.1
0.01
4.0
V DS= 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 2.5A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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Applications
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High speed power switching

Benefits
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective COSS specified (See AN 1001)

 

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