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IRF820AS View Datasheet(PDF) - International Rectifier

Part NameIRF820AS IR
International Rectifier IR
DescriptionSMPS MOSFET
IRF820AS Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF820AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– –––
––– 0.60 –––
––– ––– 3.0
2.0 ––– 4.5
V
V/°C
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA †
VGS = 10V, ID = 1.5A „
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
Qg
Total Gate Charge
1.4 ––– –––
––– ––– 17
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 4.3
––– ––– 8.5
td(on)
tr
Turn-On Delay Time
Rise Time
––– 8.1 –––
––– 12 –––
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 16 –––
––– 13 –––
Ciss
Input Capacitance
Coss
Output Capacitance
––– 340 –––
––– 53 –––
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
––– 2.7 –––
––– 490 –––
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
––– 15 –––
––– 28 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 1.5A†
ID = 2.5A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 „†
VDD = 250V
ID = 2.5A
RG = 21
RD = 97,See Fig. 10 „†
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …†
Parameter
EAS
Single Pulse Avalanche Energy‚†
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
140
2.5
5.0
Units
mJ
A
mJ
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
–––
–––
Max.
2.5
62
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) †
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.5
A showing the
integral reverse
G
––– ––– 10
p-n junction diode.
S
––– ––– 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V „
––– 330 500 ns TJ = 25°C, IF = 2.5A
––– 760 1140 nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Applications
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High speed power switching

Benefits
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective COSS specified (See AN 1001)

 

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