IRF250 View Datasheet(PDF) - International Rectifier
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IRF250 Datasheet PDF : 6 Pages
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Provisional Data Sheet No. PD-9.338D
JANTX2N6766
HEXFET® POWER MOSFET
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
N-CHANNEL
200 Volt, 0.085Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6766
JANTXV2N6766
200V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
0.085Ω
ID
30A
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6766, JANTXV2N6766 Units
30
19
A
120
150
W
1.2
W/K
±20
V
500
mJ
30
A
15
mJ
5.0
V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
g
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