Die Characteristics
DIE DIMENSIONS:
1640µm x 1520µm x 483µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (Powered Up):
V-
Metallization Mask Layout
BAL
IN-
2
1
HA-5020
PASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1kÅ
TRANSISTOR COUNT:
62
PROCESS:
High Frequency Bipolar Dielectric Isolation
HA-5020
DISABLE
V+
8
7
IN+
3
4
V-
21
5
BAL
6
OUT
FN2845.11
June 5, 2006