ZXMN6A11DN8 View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

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ZXMN6A11DN8

60V SO8 Dual N-channel enhancement mode MOSFET

Diodes Incorporated. 

ZXMN6A11DN8

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Static

Drain-source breakdown voltage V(BR)DSS

Zero gate voltage drain current IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th)

Static drain-source on-state

resistance (*)

RDS(on)

Forward transconductance(*)(‡)

Dynamic(‡)

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching (†) (‡)

Turn-on-delay time

Rise time

Turn-off delay time

Fall time

Gate charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate drain charge

Qgd

Source-drain diode

Diode forward voltage(*)

VSD

Reverse recovery time(‡)

trr

Reverse recovery charge(‡)

Qrr

Min.

60

1.0

Typ.

4.9

330

35.2

17.1

1.95

3.5

8.2

4.6

3.0

5.7

1.25

0.86

0.85

21.5

20.5

Max. Unit Conditions

V ID= 250␮A, VGS=0V

1.0 ␮A VDS= 60V, VGS=0V

100 nA VGS=±20V, VDS=0V

V ID= 250␮A, VDS=VGS

0.120 ⍀ VGS= 10V, ID= 2.5A

0.180 ⍀ VGS= 4.5V, ID = 2A

S VDS= 15V, ID= 2.5A

pF VDS= 40V, VGS=0V

pF f=1MHz

pF

ns VDD= 30V, ID= 2.5A

ns RG≅6.0⍀, VGS= 10V

ns

ns

nC VDS= 15V, VGS= 5V

ID= 2.5A

nC VDS= 15V, VGS= 10V

nC ID= 2.5A

nC

0.95

V Tj=25°C, IS= 2.8A,

VGS=0V

ns Tj=25°C, IS= 2.5A,

nC di/dt=100A/␮s

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Issue 3 - September 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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