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Z0107MAT Просмотр технического описания (PDF) - NXP Semiconductors.

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Z0107MAT Logic level four-quadrant triac NXP
NXP Semiconductors. NXP
Z0107MAT Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt rate of rise of
commutating voltage
Conditions
VD = 12 V; Tj = 25 °C; T2+ G-;
see Figure 6
VD = 12 V; Tj = 25 °C; T2- G-
VD = 12 V; Tj = 25 °C; T2+ G+
VD = 12 V; Tj = 25 °C; T2- G+
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2+ G-;
see Figure 7
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2+ G+
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2- G+
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2- G-
VD = 12 V; Tj = 25 °C; see Figure 10
IT = 1 A; see Figure 8
IT = 0.1 A; VD = 12 V; Tj = 25 °C;
see Figure 9
IT = 0.1 A; VD = 600 V; Tj = 125 °C
VD = 600 V; Tj = 125 °C
VDM = 402 V; Tj = 110 °C; gate open
circuit; see Figure 11
VD = 400 V; Tj = 110 °C;
dIcom/dt = 0.44 A/ms; gate open circuit
4
IGT
IGT(25°C)
3
(1)
(2)
(3)
(4)
2
1
003aaa205
3
IL
IL(25°C)
2
1
Z0107MA
Logic level four-quadrant triac
Min Typ Max Unit
-
-
5
mA
-
-
5
mA
-
-
5
mA
-
-
7
mA
-
-
20
mA
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
1.3 1.6 V
-
-
1.3 V
0.2 -
-
-
-
V
0.5 mA
20
-
-
V/µs
1
-
-
V/µs
003aaa203
0
50
0
50
100
150
Tj (°C)
Fig 6. Normalized gate trigger current as a function of
junction temperature
0
50
0
50
100
150
Tj (°C)
Fig 7. Normalized latching current as a function of
junction temperature
Z0107MA_3
Product data sheet
Rev. 03 — 5 August 2009
© NXP B.V. 2009. All rights reserved.
6 of 12
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