datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

ULN2003AIDRG4 View Datasheet(PDF) - Texas Instruments

Part NameDescriptionManufacturer
ULN2003AIDRG4 High-Voltage, High-Current Darlington Transistor Arrays Texas-Instruments
Texas Instruments Texas-Instruments
ULN2003AIDRG4 Datasheet PDF : 33 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ULN2002A, ULN2003A, ULN2003AI
ULQ2003A, ULN2004A, ULQ2004A
SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016
6 Specifications
www.ti.com
6.1 Absolute Maximum Ratings
at 25°C free-air temperature (unless otherwise noted)(1)
VCC
Collector-emitter voltage
Clamp diode reverse voltage(2)
VI
Input voltage(2)
Peak collector current, See Figure 4 and Figure 5
IOK
Output clamp current
Total emitter-terminal current
TA
Operating free-air temperature range
TJ
Operating virtual junction temperature
Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds
Tstg
Storage temperature
MIN
ULN200xA
–20
ULN200xAI
–40
ULQ200xA
–40
ULQ200xAT
–40
–65
MAX
50
50
30
500
500
–2.5
70
105
85
105
150
260
150
UNIT
V
V
V
mA
mA
A
°C
°C
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
6.2 ESD Ratings
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
VALUE
±2000
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VCC
Collector-emitter voltage (non-V devices)
TJ
Junction temperature
MIN
MAX UNIT
0
50
V
–40
125
°C
6.4 Thermal Information
ULx200x
THERMAL METRIC(1)
D
(SOIC)
N
(PDIP)
NS
(SO)
PW
(TSSOP)
UNIT
16 PINS 16 PINS 16 PINS 16 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
73
67
64
108
°C/W
36
54
n/a
33.6
°C/W
n/a
n/a
n/a
51.9
°C/W
n/a
n/a
n/a
2.1
°C/W
n/a
n/a
n/a
51.4
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
Submit Documentation Feedback
Copyright © 1976–2016, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A
Direct download click here
 

Share Link : Texas-Instruments
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]