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ULN2003AIDRG4 View Datasheet(PDF) - Texas Instruments

Part NameDescriptionManufacturer
ULN2003AIDRG4 High-Voltage, High-Current Darlington Transistor Arrays Texas-Instruments
Texas Instruments Texas-Instruments
ULN2003AIDRG4 Datasheet PDF : 33 Pages
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ULN2002A, ULN2003A, ULN2003AI
ULQ2003A, ULN2004A, ULQ2004A
SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016
9.2.2 Detailed Design Procedure
When using ULN2003A device in a coil driving application, determine the following:
• Input voltage range
• Temperature range
• Output and drive current
• Power dissipation
9.2.2.1 Drive Current
The coil voltage (VSUP), coil resistance (RCOIL), and low-level output voltage (VCE(SAT) or VOL) determine the coil
current.
ICOIL = (VSUP – VCE(SAT)) / RCOIL
(1)
9.2.2.2 Low-Level Output Voltage
The low-level output voltage (VOL) is the same as VCE(SAT) and can be determined by, Figure 1, Figure 2, or
Figure 7.
9.2.2.3 Power Dissipation and Temperature
The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils
driven can be determined by Figure 4 or Figure 5.
For a more accurate determination of number of coils possible, use the below equation to calculate ULN2003A
device on-chip power dissipation PD:
N
å P
D
=
V
OLi
´
I
Li
i=1
where
• N is the number of channels active together
• VOLi is the OUTi pin voltage for the load current ILi. This is the same as VCE(SAT)
(2)
To ensure reliability of ULN2003A device and the system, the on-chip power dissipation must be lower that or
equal to the maximum allowable power dissipation (PD(MAX)) dictated by below equation Equation 3.
( ) PD(MAX) = TJ(MAX) - TA qJA
where
• TJ(max) is the target maximum junction temperature
• TA is the operating ambient temperature
• RθJA is the package junction to ambient thermal resistance
(3)
Limit the die junction temperature of the ULN2003A device to less than 125°C. The IC junction temperature is
directly proportional to the on-chip power dissipation.
Copyright © 1976–2016, Texas Instruments Incorporated
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