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U401 データシートの表示(PDF) - Micross Components

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U401 Linear Systems replaces discontinued Siliconix U401 with LSU401 MICROSS
Micross Components MICROSS
U401 Datasheet PDF : 1 Pages
1
LSU401
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U401 with LSU401
The U401/ LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU401 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU401 features a 5-
mV offset and 10-µV/°C drift. The LSU401 is a direct
replacement for discontinued Siliconix U401.
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| V GS12 / T| = 10µV/°C TYP.
en = 6nV/Hz @ 10Hz TYP.
Vp = 2.5V TYP.
Maximum Temperatures
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications.
Storage Temperature
Operating Junction Temperature
65°C to +150°C
+150°C
(See Packaging Information).
Maximum Voltage and Current for Each Transistor – Note 1
VGSS
Gate Voltage to Drain or Source
50V
VDSO
Drain to Source Voltage
50V
U401 / LSU401 Applications:
IG(f)
Gate Forward Current
Maximum Power Dissipation
10mA
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
Device Dissipation @ Free Air – Total
300mW
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS12 / T| max.
DRIFT VS.
TEMPERATURE
10 µV/°C VDG=10V, ID=200µA
TA=55°C to +125°C
| V GS12 | max.
OFFSET VOLTAGE
5
mV VDG=10V, ID=200µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS
CONDITIONS
Click BVGSS
BVGGO
YfSS
YfS
Breakdown Voltage
GateToGate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
50
±50
2000
1000
To Buy 60
‐‐
‐‐
‐‐
‐‐
7000
‐‐
2000
V
V
µmho
µmho
VDS = 0
I G= 1nA
ID=1nA
ID= 0
IS= 0
VDG= 10V
VDG= 15V
VGS= 0V f = 1kHz
ID= 200µA f = 1kHz
|YFS12 / Y FS|
Mismatch
‐‐
0.6
3
%
DRAIN CURRENT
IDSS
Full Conduction
0.5
‐‐
10
mA
VDG= 10V
VGS= 0V
|IDSS12 / IDSS| Mismatch at Full Conduction
‐‐
1
5
%
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
0.5
‐‐
2.5
V
VDS= 15V
ID= 1nA
VGS(on)
Operating Range
‐‐
‐‐
2.3
V
VDS=15V
ID=200µA
GATE CURRENT
IGmax.
Operating
‐‐
4
15
pA
VDG= 15V ID= 200µA
IGmax.
IGSSmax.
High Temperature
At Full Conduction
‐‐
‐‐
10
‐‐
‐‐
100
nA
TA= +125°C
pA
VDS =0
IGSSmax.
High Temperature
5
5
5
pA
VDG= 15V TA= +125°C
OUTPUT CONDUCTANCE
YOSS
Full Conduction
‐‐
‐‐
20
µmho
VDG= 10V
VGS= 0V
YOS
Operating
‐‐
0.2
2
µmho
VDG= 15V
ID= 500µA
COMMON MODE REJECTION
CMR
20 log | V GS12/ V DS|
95
‐‐
‐‐
dB
VDS = 10 to 20V ID=30µA
NOISE
VDS= 15V VGS= 0V RG= 10M
NF
Figure
‐‐
‐‐
0.5
dB
f= 100Hz NBW= 6Hz
en
Voltage
‐‐
20
‐‐
nV/Hz
VDS=15V ID=200µA f=10Hz NBW=1Hz
CAPACITANCE
CISS
Input
‐‐
‐‐
8
pF
VDS= 15V ID= 200µA f= 1MHz
CRSS
Reverse Transfer
‐‐
‐‐
1.5
pF
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 / TO-78 (Top View)
Micross Components Europe
Available Packages:
U401 / LSU401 in TO-71 & TO-78
U401 / LSU401 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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