datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

H06N60E View Datasheet(PDF) - Hi-Sincerity Mocroelectronics

Part NameDescriptionManufacturer
H06N60E N-Channel Power Field Effect Transistor HSMC
Hi-Sincerity Mocroelectronics HSMC
H06N60E Datasheet PDF : 6 Pages
1 2 3 4 5 6
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=10V
VGS=8V
VGS=6V
VGS=5V
VGS=4
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Typical On-Resistance & Drain Current
1.6
1.4
1.2
1.0
VGS=10V
0.8
0.6
0.4
0.2
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12
Drain Current-ID (A)
Drain Current Variation with Gate Voltage &
Temperature
6
VDS=10 V
5
Tc= 25°C
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Gate-Source Voltage-VGS (V)
On Resistance Variation with Temperature
2.50
2.00
VGS=10 V
1.50
ID=3A
1.00
0.50
0.00
0
25
50
75
100
125
150
Case Temperature-Tc (oC)
H06N60U, H06N60E, H06N60F
Typical On-Resistance & Drain Current
1.6
1.5
1.4
1.3
1.2
VGS=10V
VGS=15V
1.1
1.0
0.9
0.8
0 1 2 3 4 5 6 7 8 9 10 11 12
Drain Current-ID (A)
Capacitance Characteristics
2000
1500
1000
500
Crss
Coss
Ciss
0
0.1
1
10
100
VDS, Deain-Source Voltage (V)
HSMC Product Specification
Direct download click here
 

Share Link : HSMC
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]