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TEA1610P View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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TEA1610P Datasheet PDF : 21 Pages
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TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
VDD
TEA1610
VHS
bridge voltage
supply
(high side)
MOSFET
SWITCH
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
signal
ground
Fig 1. Basic configuration
power ground
mgu336
2. Features
I Integrated high voltage level-shift
function
I Integrated high voltage bootstrap diode
I Low start-up current (green function)
I Adjustable dead time
I Transconductance error amplifier for
ultra high-ohmic regulation feedback
I Latched shut-down circuit for
overcurrent and overvoltage protection
I Adjustable minimum and maximum
frequencies
I Undervoltage lockout
 

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