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TEA1610P View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
TEA1610P Zero-voltage-switching resonant converter controller NXP
NXP Semiconductors. NXP
TEA1610P Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
11. Characteristics
Table 6. Characteristics
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V
and Tamb = 25 °C; tested using the circuit shown in Figure 10, unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
High voltage pins VDD(F), GH and SH
IL
leakage current
VDD(F), VGH and VSH = 600 V
-
-
30
µA
Supply pin VDD
VDD(initial)
supply voltage for
low side on; high side off
defined driver output
-
4
5
V
VDD(start)
VDD(stop)
VDD(hys)
start oscillator voltage
stop oscillator voltage
start-stop hysteresis
voltage
12.9
13.4
13.9
V
9.0
9.4
9.8
V
3.8
4.0
4.2
V
VDD(sdc)
shut-down clamp
voltage
low side off; high side off;
IDD = 1 mA
11.0
12.0
13.0
V
VDD(reset) reset voltage
4.5
5.3
6.0
V
IDD
supply current:
low side on; high side off
[1]
Cf = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA; Co = 200 pF
low side off; high side off;
VDD = 9 V
start-up
130
180
220
µA
operating
-
2.4
-
mA
shut-down
-
130
180
µA
Reference voltage on pin VREF
VREF
reference voltage
IREF
current capability
Zo(VREF)
output impedance
-----V----R-T--E---F--
temperature
coefficient
IREF = 0 mA
source only
IREF = 1 mA
IREF = 0 mA; Tj = 25 to 150 °C
2.9
3.0
3.1
1.0
-
-
-
5.0
-
-
0.3
-
V
mA
mV/K
Current controlled oscillator pins IRS, IFS, CF
ICF(ch)(min) minimum CF charge IIRS = 15 µA; VCF = 2 V
current
ICF(ch)(max) maximum CF charge IIRS = 200 µA; VCF = 2 V
current
VIRS
ICF(dis)(min)
voltage on pin IRS
minimum CF
discharge current
IIRS = 200 µA
IIRS = 50 µA; VCF = 2 V
ICF(dis)(max) maximum CF
discharge current
IIFS = 1 mA; VCF = 2 V
VIFS
fbridge(min)
voltage on pin IFS
minimum bridge
frequency (for stable
operation)
IIFS = 1 mA
CF = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA; fbridge = -f---O--2--S---C-
28
30
32
µA
340
380
420
µA
570
600
630
mV
47
50
53
µA
0.93
0.98
1.03
mA
570
600
630
mV
188
200
212
kHz
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
11 of 21
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