TEA1610P View Datasheet(PDF) - NXP Semiconductors.
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TEA1610P Datasheet PDF : 21 Pages
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NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
9. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Voltages
VHS
high side driver voltage
VDD
supply voltage
VI+
amplifier non-inverting input
voltage
0
[1] 0
0
600
V
15
V
5
V
VI-
VSD
Currents
amplifier inverting input voltage
shut-down input voltage
0
5
V
0
5
V
IIFS
oscillator falling slope input
current
-
1
mA
IIRS
oscillator rising slope input
current
-
1
mA
IREF
VREF source current
Power and temperature
-
−2
mA
Ptot
Tamb
Tstg
Handling
total power dissipation
ambient temperature
storage temperature
Tamb < 70 °C
-
operating
−25
−25
0.8
W
+70
°C
+150
°C
VESD
electrostatic discharge voltage
[2] -
[3] -
2000
V
200
V
[1] It is recommended that a 100 nF capacitor be placed as close as possible to the VDD pin (as indicated in
Figure 10, and in the application note).
[2] Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
[3] Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and 10 Ω
resistor.
10. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-pin)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to pin
Conditions
in free air
Typ
Unit
100
K/W
50
K/W
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
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