SM8A27 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
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SM8A27 Datasheet PDF : 5 Pages
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SM8A27
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218AB
PRIMARY CHARACTERISTICS
VBR
27 V
PPPM (10 x 1000 μs)
6600 W
PD
8W
IRSM
130 A
IFSM
700 A
TJ max.
175 °C
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
Maximum working stand-off voltage
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
SYMBOL
PPPM
PD
IRSM
VWM
IFSM
TJ, TSTG
VALUE
6600
8.0
130
22.0
700
- 55 to + 175
UNIT
W
W
A
V
A
°C
Document Number: 88386 For technical questions within your region, please contact one of the following:
Revision: 09-Feb-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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