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K06N60 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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K06N60 Datasheet PDF : 0 Pages
0.8mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.6mJ
0.4mJ
0.2mJ
Eon*
E off
SKP06N60
SKA06N60
0.6mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.4mJ
0.2mJ
E o ff
Eon*
0.0mJ
0A
3A
6A
9A 12A 15A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 50,
Dynamic test circuit in Figure E)
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.3mJ
0.0mJ
0
50
100
150
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)
0.2mJ
0.1mJ
Eon*
Eoff
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)
7
Rev. 2.3 Sep 07
 

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