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K06N60 Просмотр технического описания (PDF) - Infineon Technologies

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K06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Infineon
Infineon Technologies Infineon
K06N60 Datasheet PDF : 15 Pages
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SKP06N60
SKA06N60
20A
20A
15A
VGE=20V
10A
15V
13V
11V
9V
5A
7V
5V
15A
VGE=20V
15V
10A
13V
11V
9V
7V
5V
5A
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
20A
18A
Tj=+25°C
16A
-55°C
+150°C
14A
12A
10A
8A
6A
4A
2A
0A
0V
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 12A
3.0V
2.5V
IC = 6A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3 Sep 07
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