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K06N60 Просмотр технического описания (PDF) - Infineon Technologies

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K06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Infineon
Infineon Technologies Infineon
K06N60 Datasheet PDF : 15 Pages
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SKP06N60
SKA06N60
Symbol Conditions
Max. Value
Unit
SKP06N60 SKA06N60
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO220-3-31 /-111
1.85
3.5
62
3.9
K/W
5.0
65
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=6A
Tj=25°C
Tj=150°C
VGE=0V, IF=6A
Tj=25°C
Tj=150°C
IC=250µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=6A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=6A
VGE=15V
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2.0
2.3
1.4
1.25
4
-
-
-
4.2
350
38
23
32
7
60
Unit
max.
-V
2.4
2.8
1.8
1.65
5
µA
20
700
100 nA
-S
420 pF
46
28
42 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 Sep 07
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