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K06N60 Просмотр технического описания (PDF) - Infineon Technologies

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K06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Infineon
Infineon Technologies Infineon
K06N60 Datasheet PDF : 15 Pages
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SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
G
E
Very soft, fast recovery anti-parallel EmCon diode
Isolated TO-220, 2.5kV, 60s
PG-TO-220-3-1
(TO-220AB)
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-220-3-31 / -111
(FullPAK)
Type
SKP06N60
SKA06N60
VCE
IC
VCE(sat)
Tj
Marking Package
600V
6A
2.3V
150°C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150°C K06N60 PG-TO-220-3-31 / -111
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
M
Tj , Tstg
Ts
Value
Unit
SKP06N60 SKA06N60
600
600 V
A
12
9
6.9
5.0
24
24
24
24
12
12
6
6
24
24
±20
±20 V
µs
10
10
W
68
32
0.6
0.5 Nm
-55...+150 -55...+150 °C
260
260 °C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
3 Maximum mounting processes: 3
1
Rev. 2.3 Sep 07
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