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K06N60 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталогеКомпоненты Описаниепроизводитель
K06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Infineon
Infineon Technologies Infineon
K06N60 Datasheet PDF : 15 Pages
First Prev 11 12 13 14 15
Figure A. Definition of switching times
i,v
I
F
di /dt
F
I
rrm
SKP06N60
SKA06N60
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =250pF.
14
Rev. 2.3 Sep 07
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